Position: Home  > All Categories> Integrated Circuits (ICs) > SPU07N60S5

SPU07N60S5

MOSFET COOL MOS N-CH 600V 7.3A

product image

SPU07N60S5 Picture
See larger image
SeekIC No. : 00151399 Detail

SPU07N60S5: MOSFET COOL MOS N-CH 600V 7.3A

SPU07N60S5 Data Sheet

floor Price/Ceiling Price

US $ .55~.67 / Piece | Get Latest Price
Part Number:
SPU07N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.67
  • $.59
  • $.56
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.6 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 7.3
4.6		 A
Pulsed drain current, tp limited by Tjmax ID puls 14.6
Avalanche energy, single pulse
ID=-A, VDD=50V		 EAS 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.3A, VDD=50V		 EAR 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID =7.3A, Tj = 125 °C		 dv/dt 20 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPU07N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds 970pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU07N60S5
SPU07N60S5
SPU07N60S5IN ND
SPU07N60S5INND
SPU07N60S5IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Line Protection, Backups
BX0023
A20B-1008-0550
Resistors
A101G
3006P-1-205LF
Cable Assemblies
CS1W-CN114
XW2Z-500T
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more