SPU09P06PL

MOSFET P-CH 60V 9.7A

product image

SPU09P06PL Picture
SeekIC No. : 00163874 Detail

SPU09P06PL: MOSFET P-CH 60V 9.7A

floor Price/Ceiling Price

Part Number:
SPU09P06PL
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 9.7 A
Resistance Drain-Source RDS (on) : 400 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 400 mOhms
Continuous Drain Current : - 9.7 A


Features:

· P-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID -9.7
-6.8
A
Pulsed drain current
TC = 25 °C
ID puls -38.8
Avalanche energy, single pulse
ID =-9.7A, VDD = -25 V, RGS = 25
EAS 70 mJ
Repetitive avalanche energy, limited by Tjmax EAR 4.2
Reverse diode dv/dt
IS =-9.7 A, VDS =-25V, di/dt = 200 A/s,Tjmax=175°C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 42 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  



Parameters:

Technical/Catalog InformationSPU09P06PL
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C9.7A
Rds On (Max) @ Id, Vgs250 mOhm @ 6.8A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU09P06PL
SPU09P06PL
SPU09P06PLIN ND
SPU09P06PLINND
SPU09P06PLIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Integrated Circuits (ICs)
Batteries, Chargers, Holders
Soldering, Desoldering, Rework Products
Optoelectronics
View more