SPU18P06P

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Package / Case : TO-251
Continuous Drain Current : - 18.6 A
Resistance Drain-Source RDS (on) : 130 m Ohms


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	-18.6 -13.2	A
Pulsed drain current TC = 25 °C	ID puls	-74.4
Avalanche energy, single pulse ID =-18.6A, VDD = -25 V, RGS = 25	EAS	150	mJ
Repetitive avalanche energy, limited by Tjmax	EAR	8
Reverse diode dv/dt IS =-18.6 A, VDS =-48V, di/dt = 200 A/s,Tjmax=175°C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	80	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPU18P06P
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18.6A
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.2A, 10V
Input Capacitance (Ciss) @ Vds	860pF @ 25V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU18P06P SPU18P06P SPU18P06PIN ND SPU18P06PINND SPU18P06PIN