Specifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Continuous drain currentTC = 25 °CTC = 100 °C ID 7.34.6 A Pulsed drain currentTC = 25 °C ID puls 14.6 Avalanche energy, single pulseID = 7.5 A, VDD = 50 V, RGS = 25 EAS 230 mJ Avalanche c...
SPUX3N60S5: Specifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Continuous drain currentTC = 25 °CTC = 100 °C ID 7.34.6 A Pulsed drain currentTC = 25 °C ID puls 1...
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Specifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °CTC = 100 °...
Specifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Contin...
Features: · N-Channel· Enhancement mode· Ultra low gate charge· Avalanche rated· dv/dt rated·150°C...
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDSS | 600 | V |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 14.6 | |
| Avalanche energy, single pulse ID = 7.5 A, VDD = 50 V, RGS = 25 |
EAS | 230 | mJ |
| Avalanche current (periodic, limited by Tjmax) | IAR | tbd | A |
| Avalanche energy (10 kHz, limited by Tjmax) | EAR | tbd | mJ |
| Reverse diode dv/dt IS = 7.3 A, VDS<VDSS, di/dt = 100 A/s, Tjmax = 150 °C |
dv/dt | 6 | KV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation, TC = 25 °C | Ptot | 83 | W |
| Operating temperature | Tj | -55 ...+150 | °C |
| Storage temperature | Tstg | -55 ... +150 | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |