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SPUX7N60S5

Features: · N-Channel· Enhancement mode· Ultra low gate charge· Avalanche rated· dv/dt rated·150°C operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Continuous drain currentTC = 25 °CTC = 100 °C ID 0.80.5 A Pulsed drain currentTC...

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SPUX7N60S5: Features: · N-Channel· Enhancement mode· Ultra low gate charge· Avalanche rated· dv/dt rated·150°C operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VD...

SPUX7N60S5 Data Sheet

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Part Number:
SPUX7N60S5
Supply Ability:
5000

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Upload time: 2025/12/24

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Product Details

Description



Features:

· N-Channel
· Enhancement mode
· Ultra low gate charge
· Avalanche rated
· dv/dt rated
· 150°C operating temperature


Specifications

Parameter Symbol Value Unit
Drain source voltage VDSS 600 V
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 0.8
0.5		 A
Pulsed drain current
TC = 25 °C		 ID puls 1.6
Avalanche energy, single pulse
ID = 0.8 A, VDD = 50 V, RGS = 25     		EAS tbd mJ
Avalanche current (periodic, limited by Tjmax) IAR tbd A
Avalanche energy (10 kHz, limited by Tjmax) EAR tbd mJ
Reverse diode dv/dt
IS = 0.8 A, VDS<VDSS, di/dt = 100 A/s,
Tjmax = 150 °C		 dv/dt 6 KV/s
Gate source voltage VGS ±20 V
Power dissipation, TC = 25 °C Ptot 11 W
Operating temperature Tj -55 ...+150 °C
Storage temperature Tstg -55 ... +150
IEC climatic category; DIN IEC 68-1   55/150/56  



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