Purchase SPUX7N60S5, In-stock SPUX7N60S5 From SeekIC.
- Table of contents:
SPUX7N60S5
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Suppliers
DataSheet
General Description
SPUX7N60S5 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDSS | 600 | V |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 0.8 0.5 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 1.6 | |
| Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, RGS = 25 |
EAS | tbd | mJ |
| Avalanche current (periodic, limited by Tjmax) | IAR | tbd | A |
| Avalanche energy (10 kHz, limited by Tjmax) | EAR | tbd | mJ |
| Reverse diode dv/dt IS = 0.8 A, VDS<VDSS, di/dt = 100 A/s, Tjmax = 150 °C |
dv/dt | 6 | KV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation, TC = 25 °C | Ptot | 11 | W |
| Operating temperature | Tj | -55 ...+150 | °C |
| Storage temperature | Tstg | -55 ... +150 | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |
SPUX7N60S5 Features
· N-Channel
· Enhancement mode
· Ultra low gate charge
· Avalanche rated
· dv/dt rated
· 150°C operating temperature
· Enhancement mode
· Ultra low gate charge
· Avalanche rated
· dv/dt rated
· 150°C operating temperature
SPUX7N60S5
PDF/DataSheet Download
- Datasheet: SPUX7N60S5
- File Size: 79138 KB
- Manufacturer: Infineon
- Click here to Download
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