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SPW17N80C2

Features: · New revolutionary high voltage technology· Worldwide best RDS(on) in TO 247· Ultra low gate charge· Periodic avalanche rated· Extreme d v/d t rated· Ultra low effective capacitancesSpecifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °CTC = 100 °C ID ...

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SPW17N80C2: Features: · New revolutionary high voltage technology· Worldwide best RDS(on) in TO 247· Ultra low gate charge· Periodic avalanche rated· Extreme d v/d t rated· Ultra low effective capacitancesSpeci...

SPW17N80C2 Data Sheet

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SPW17N80C2
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Product Details

Description



Features:

· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 247
· Ultra low gate charge
· Periodic avalanche rated
· Extreme d v/d t rated
· Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 17
11		 A
Pulsed drain current, tp limited by Tjmax ID puls 51
Avalanche energy, single pulse
ID=4A, VDD=50V		 EAS 670 mJ
Avalanche energy, repetitive tAR limited by Tjmax
1)
ID=17A, VDD=50V		 EAR 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 17 A
Reverse diode d v/d t
IS=17A, VDS < VDD, d i/d t=100A/µs, Tjmax=150°C		 d v/d t 6 V/ns
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 208 W
Operating and storage temperature Tj,Tstg -55... +150 W



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