SPW35N60C3, US $ 3.32-5.21 , Infineon Technologies, SPW35N60C3 DataSheet download, circuit diagram from SeekIC.com

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SPW35N60C3: MOSFET COOL MOS PWR TRANS MAX PWR 650V

SPW35N60C3 Data Sheet

US $ 3.32~5.21 / Piece | Get Latest Price

Part Number:: SPW35N60C3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	34.6 A
Resistance Drain-Source RDS (on) :	0.1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 34.6 A

Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance

Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C	34.6	A
Continuous drain current	I_D	T_C=100 °C	21.9
Pulsed drain current¹⁾	I_D,pulse	T_C=25 °C	103.8
Avalanche energy, single pulse	E_AS	I_D=17.3 A, V_DD=50 V	1500	mJ
Avalanche energy, repetitive t AR^1),2)	E_AR	I_D=34.6 A, V_DD=50 V	1.5	mJ
Avalanche current, repetitive t AR¹⁾	I^_AR		34.6	A
Drain source voltage slope	dv/dt	I_D=34.6 A, V_DS=480 V, T _j=125 °C	50	V/ns
Gate source voltage	V_GS	static	±20	V
Gate source voltage	VGS	AC (f >1 Hz)	±30	V
Power dissipation	P_tot	T_C=25 °C	313	W
Operating and storage temperature	T_j, T_stg		-55... +150	°C

Parameters:

Technical/Catalog Information	SPW35N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	34.6A
Rds On (Max) @ Id, Vgs	100 mOhm @ 21.9A, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	313W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW35N60C3 SPW35N60C3 SPW35N60C3IN ND SPW35N60C3INND SPW35N60C3IN

SPW35N60C3

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