MOSFET 55V 35A 50W 20mohm @ 10V
SQD35N05-26L-GE3: MOSFET 55V 35A 50W 20mohm @ 10V
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Application IC 300A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 35 A | ||
| Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Reel |