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SQD50N02-04-GE3

MOSFET N-CH D-S 20V 50A TO252

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SeekIC No. : 003430607 Detail

SQD50N02-04-GE3: MOSFET N-CH D-S 20V 50A TO252

SQD50N02-04-GE3 Data Sheet

floor Price/Ceiling Price

US $ .86~.86 / Piece | Get Latest Price
Part Number:
SQD50N02-04-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.86
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 119nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6250pF @ 10V
Power - Max: 136W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: TrenchFET®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25° C: 50A
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
Power - Max: 136W
Gate Charge (Qg) @ Vgs: 119nC @ 10V
Input Capacitance (Ciss) @ Vds: 6250pF @ 10V


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