SQD50AB100

The SQD50AB100 is designed as one kind of high speed, high power darlington transistor device that can be used in induction cooker, inverter microwave and oven applications. And this device has a reverse paralleld fast recovery diode. Features of this device are:(1)VCBO= 1000 V, Ic= 50 A;(2)suitable for resonance circuit applications;(3)non-isolated.

The absolute maximum ratings of the SQD50AB100 can be summarized as:(1)collector-base voltage: 1000 V;(2)collector-emitter voltage: 450 V;(3)emitter-base voltage: 11 V;(4)collector current: 50 A;(5)reverse collector current: 6 A;(6)base current: 5 A;(7)total power dissipation: 350 W;(8)junction temperature: -30 to +150 ;(9)storage temperature: -30 to +125 ;(10)mounting torque (M4): 1.5 (15) N.m.

The electrical characteristics of SQD50AB100 can be summarized as:(1)collector cut-off current: 1.0 mA;(2)emitter cut-off current: 600 to 830 mA;(3)collector-emitter sustaning voltage: 450 to 800 V;(4)DC current gain: 70 to 250 ;(5)collector-emitter saturation voltage: 2.0 V;(6)base-emitter saturation voltage: 2.8 V;(7)collector-emitter reverse voltage: 1.5 V;(8)reverse recovery time: 3 us. If you want to know more information such as the electrical characteristics about SQD50AB100, please download the datasheet in www.seekic.com or www.chinaicmart.com.