Features: · Schottky Barrier Chip· Ideally Suited for Automatic Assembly · Low Power Loss, High Efficiency· Surge Overload Rating to 30A Peak · For Use in Low Voltage Application · Guard Ring Die Construction · Plastic Case Material has UL Flammability Classification Rating 94V-O Specifications ...
SS12S100: Features: · Schottky Barrier Chip· Ideally Suited for Automatic Assembly · Low Power Loss, High Efficiency· Surge Overload Rating to 30A Peak · For Use in Low Voltage Application · Guard Ring Die Co...
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Features: • Glass passivated junctions.• High current capability, low VF.• For u...
· Schottky Barrier Chip
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 30A Peak
· For Use in Low Voltage Application
· Guard Ring Die Construction
· Plastic Case Material has UL Flammability Classification Rating 94V-O
|
Characteristic |
Symbol |
SK12 |
SK13 |
SK14 |
SK15 |
SK16 |
SK18 |
SK19 |
S110 |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM |
20 |
30 |
40 |
50 |
60 |
80 |
90 |
100 |
V |
| RMS Reverse Voltage |
VR(RMS) |
14 |
21 |
28 |
35 |
42 |
56 |
64 |
71 |
V |
| Average Rectified Output Current @TL = 75 |
IO |
1.0 |
A | |||||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
30 |
A | |||||||
| Forward Voltage @IF = 1.0A |
VF |
0.55 |
0.70 |
0.85 |
V | |||||
| Peak Reverse Current @TA = 25 At Rated DC Blocking Voltage @TA = 100 |
IRM |
0.5 20 |
mA | |||||||
| Maximum Thermal Resistance (Note 2) |
RJA |
88 |
K/W | |||||||
| Operating Temperature Range |
Tj |
-65 to +125 |
||||||||
| Storage Temperature Range |
TSTG |
-65 to +150 |
||||||||
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad areas