SS16T3

Recovery Time :
Maximum Power Dissipation :
Configuration : Single
Mounting Style : SMD/SMT
Product : Schottky Diodes
Packaging : Reel
Maximum Reverse Leakage Current : 200 uA
Forward Voltage Drop : 0.51 V
Operating Temperature Range : - 55 C to + 150 C
Forward Continuous Current : 1 A
Peak Reverse Voltage : 60 V
Max Surge Current : 40 A
Package / Case : SMA


Description

The SS16T3 employ the schottky barrier principle in a large area metal−to−silicon power diode.Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.

Features of the SS16T3 are:(1)small compact surface mountable package with J−Bent leads;(2)rectangular package for automated handling;(3)highly stable oxide passivated junction;(4)very low forward voltage drop;(5)guardring for stress protection;(6)Pbfree package is available.

The absolute maximum ratings of the SS16T3 can be summarized as:(1):the parameter is peak repetitive reverse voltage,the symbol is VRRM,the rating is 60,the unit is V;(2):the parameter is working peak reverse voltage,the symbol is VRWM,the rating is 60,the unit is V;(3):the parameter is DC blocking voltage,the symbol is VR,the rating is 60,the unit is V;(4):the parameter is average rectified forward current,the symbol is Io,the rating is 1.0,the unit is A;(5):the parameter is non−repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 Hz),the symbol is IFSM,the rating is 40,the unit is A;(6):the parameter is operating junction temperature range,the symbol is Tj,the rating is -55 to 150,the unit is ;(7):the parameter is storage/operating case temperature range,the symbol is Tstg,TC,the rating is -55 to 150,the unit is ;(8):the parameter is voltage rate of change,the symbol is dv/dt,the rating is 10000,the unit is V/s.