SS1H9

Series: -
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Manufacturer: Vishay General Semiconductor
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Diode Type: Schottky
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Voltage - DC Reverse (Vr) (Max): 90V
Current - Reverse Leakage @ Vr: 1µA @ 90V


Features:

• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief • Low power loss, high efficiency
• For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
• Guardring for overvoltage protection




Specifications

Parameter	Symbol	SS1H9	SS1H10	Unit
Device marking code		S9	S10
Maximum repetitive peak reverse voltage	VRRM	90	100	V
Maximum RMS voltage	VRMS	63	70	V
Maximum DC blocking voltage	VDC	90	100	V
Maximum average forward rectified current (see Fig. 1)	IF(AV)	1.0		A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	50		A
Peak repetitive reverse surge current at tp = 2.0s, 1KHZ	IRRM	1.0		A
Maximum thermal resistance(2)	RJA RJL	88 30		/W
Storage temperature range	TSTG	55 to +175
Maximum operating temperature	TJ	175

Description

SS1H9 and SS1H10 datasheet