Features: Extremely Lower R DS(ON)Improved Inductive RuggednessFast Switching TimesRugged Polysilicon Gate Cell StructureLow Input CapacitanceExtended Safe Operating AreaImproved High Temperature ReliabilitySurface Mounding Package : 8SOPPinoutSpecifications Symbol Characteristic Value Uni...
SSD2007A: Features: Extremely Lower R DS(ON)Improved Inductive RuggednessFast Switching TimesRugged Polysilicon Gate Cell StructureLow Input CapacitanceExtended Safe Operating AreaImproved High Temperature Re...
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| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage(1) | 50 | V |
| VDGR | Drain-Gate Voltage(RGS=1.0MΩ)(1) | 50 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current TA=25 | 2.0 | A |
| ID | Continuous Drain Current TA=100 | 1.6 | A |
| IDM | Drain Current-Pulsed (2) | 8.0 | V |
| PD | Total Power Dissipation TA=25 TA=70 |
2.0 1.3 |
W |
| TJ , TSTG | Operating and Storage Junction Temperature Range |
- 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/16" from case for 5 seconds |
300 |