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SSF10N60A

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Low RDS(ON) : 0.646 (Typ.)Specifications Symbol Characteristic Value Units VDSS Dra...

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SeekIC No. : 004503396 Detail

SSF10N60A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Low RDS...

SSF10N60A Data Sheet

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Part Number:
SSF10N60A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 25 A (Max.) @ VDS = 600V
`Low RDS(ON) : 0.646 (Typ.)


Specifications

Symbol
Characteristic

Value
Units
VDSS

Drain-to-Source Voltage
600
V
ID
Continuous Drain Current (TC=25 )
6.9
A
Continuous Drain Current (TC=100 )
4.3
IDM
Drain Current-Pulsed
40
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
519
mJ
IAR
Avalanche Current
6.9
A
EAR
Repetitive Avalanche Energy
9
mJ
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
90
0.72
W
W/
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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