SSF10N60B

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 6.9 A


Features:

• 6.9A, 600V, R _DS(on) = 0.8Ω @V_GS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	SSF10N60B	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC = 100°C)	6.9	A
		4.3	A
IDM	Drain Current - Pulsed                                   (Note 1)	27.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy                    (Note 2)	520	mJ
IAR	Avalanche Current                                         (Note 1)	6.9	A
EAR	Repetitive Avalanche Energy                          (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt                             (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                   - Derate above 25°C	90	W
		0.72	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors SSF10N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology SSF10N60B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SSF10N60B is well suited for high efficiency switch mode power supplies.