Features: SpecificationsDescriptionThe SSH4N90 has some features:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improved high temperature reliability. Absolute maximu...
SSH4N90: Features: SpecificationsDescriptionThe SSH4N90 has some features:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input ca...
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The SSH4N90 has some features:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improved high temperature reliability.
Absolute maximum ratings of the SSH4N90 are:(1)drain-source voltage:900 Vdc;(2)continuous drain current Tc=25:4.0 Adc;(3)continuous drain current Tc=100:2.8 Adc;(4)drain current-pulsed:16 Adc;(7)gate-to-source voltage:+-30;(8)single pulsed avalanche energy:280 mJ;(9)avalanche current:10 A;(10)total power dissipation at Tc=25:125 Watts;(11)linear derating factor:1.00 W/;(12)operating and storage:-55 to 150;(13)junction temperature range:-55 to 150;(14)maximum lead temp.for soldering purposes,1/8" from case for 5 seconds:300.
If you want to know more information about SSH4N90 about this type,please down load the datasheet.