SSH4N90AS

The SSH4N90AS is one kind of advanced power MOSFET.The SSH6N80AS has some features such as:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25uA(Max.) @ Vds=900 V;(7)low Rds(on):3.054.

The absolute maximum ratings of SSH4N90AS can be summerized as:(1)drain-to-source voltage:900 V;(2)continuous drain current(Tc=25):4.5A;(3)continuous drain current(Tc=100):2.8 A;(4)drain current-pulsed:18 A;(5)gate-to-source voltage:+-30 V;(6)single pulsed avalanche energy:536 mJ;(7)avalanche current:4.5 A;(8)repetitive avalanche energy:14 mJ;(9)peak diode recovery dv/dt:1.5 V/ns;(10)total power dissipation:140 W;(11)linear derating factor:1.12 W/;(12)operating junction and storage temperature range:-55 to +150.

If you want to get more information about SSH4N90AS, please download the datasheet,thank you! www.chinaicmart.com   www.seekic.com