Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 mA (Max.) @ VDS = 800V`Low RDS(ON) : 1.824 (Typ.)Specifications Symbol Characteristic Value Units VDSS Dra...
SSH5N80A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 mA (Max.) @ VDS = 800V`Low RD...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
800 |
V |
|
ID |
Continuous Drain Current (TC=25) |
5 |
A |
| Continuous Drain Current (TC=100) |
3.2 |
A | |
|
IDM |
Drain Current-Pulsed |
20 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
333 |
mJ |
|
IAR |
Avalanche Current |
5 |
A |
|
EAR |
Repetitive Avalanche Energy |
16 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
2.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
150 1.28 |
W W/ |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |