SSH5N90A

Features of the SSH5N90A are:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leadage current:25A(Max) @ VDS=900V;(7)low RDS(ON):2.300(Typ.).

The absolute maximum ratings of the SSH5N90A can be summarized as:(1):the parameter is drain-to-source voltage,the symbol is VDSS,the rating is 900,the unit is V;(2):the parameter is continuous drain current (TC=25),the symbol is ID,the rating is 5,the unit is A;(3):the parameter is continuous drain current (TC=100),the symbol is ID,the rating is 3.2,the unit is A;(4):the parameter is drain current-pulsed,the symbol is IDM,the rating is 20,the unit is A;(5):the parameter is gate-to-source voltage,the symbol is VGS,the rating is ±30,the unit is V;(6):the parameter is single pulsed avalanche energy,the symbol is EAS,the rating is 529,the unit is mJ;(7):the parameter is avalanche current,the symbol is IAR,the rating is 5,the unit is A;(8):the parameter is repetitive avalanche energy,the symbol is EAR,the rating is 16,the unit is mJ;(9):the parameter is peak diode recovery dv/dt,the symbol is dv/dt,the rating is 1.5,the unit is V/ns;(10):the parameter is total power dissipation TC=25,the symbol is PD,the rating is 160,the unit is W;(11):the parameter is total power dissipation linear derating factor,the symbol is PD,the rating is 1.28,the unit is W;(12):the parameter is operating junction and storage temperature range,the symbol is TJ,TSTG,the rating is -55 to +150,the unit is ;(13):the parameter is maximum lead temperature for soldering purposes,1/8" from case for 5-seconds,the symbol is TL,the rating is 300,the unit is .

The thermal resistance of the SSH5N90A can be summarized as:(1):the parameter is junction-to-case,the symbol is RJC,the rating is 0.75,the unit is /W;(2):the parameter is case-to-sink,the symbol is RCS,the rating is 0.25,the unit is /W;(3):the parameter is junction-to-ambient,the symbol is RJA,the rating is 40,the unit is /W.