SSH8N80

The SSH8N80 is a kind of N-channel power MOSFET.

Features of the SSH8N80 are:(1)lower RDS(ON); (2)improved inductive ruggedness; (3)fast switching times; (4)rugged polysilicon gate cell structure; (5)lower input capacitance; (6)extended safe operating area; (7)improved high temperature reliability.

The absolute maximum ratings of the SSH8N80 can be summarized as:(1): drain-source voltage(VDSS) is 800 Vdc; (2): drain-gate voltage(VDGR) is 800 Vdc when RGS is 1 M ohms; (3): gate-source voltage(VGS) is ±30 Vdc; (4): continuous drain current(ID) is 8.0 Adc when Tc is 25; (5): continuous drain current(ID0 is 5.6 Adc when Tc is 100; (6): single pulsed avalanche energy(Eas) is 810 mJ; (7): avalanche current(IAS) is 8.0 A; (8): maximum lead temp.for soldering purpose,1/8" from case for 5 seconds(TL) is 300.