Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 900VLow R DS(ON) : 1.247(Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 900 ...
SSH8N90A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 900VLow R DS(ON) :...
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Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low R DS(ON) : 1.247 (Typ.)
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 900 | V |
| ID | Continuous Drain Current (TC=25°C ) |
8 | A |
| Continuous Drain Current (TC=100°C ) |
5.1 | ||
| IDM | Drain Current - Pulsed | 32 | A |
| VGS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy | 847 | mJ |
| IAR | Avalanche Current | 8 | A |
| EAR | Repetitive Avalanche Energy | 24 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 1.5 | V/ns |
| PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
240 | W |
| 1.92 | W/°C | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |