ApplicationSuitable for high-density mounting due to compact packageLow on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V): Ron = 85 mΩ (max) (@VGS = −10 V)High-speed switchingPinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS -30 ...
SSM3J14T: ApplicationSuitable for high-density mounting due to compact packageLow on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V): Ron = 85 mΩ (max) (@VGS = −10 V)High-speed switchi...
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Characteristic | Symbol | Rating | Unit | |
Drain-Source voltage | VDS | -30 | V | |
Gate-Source voltage | VGSS | ±20 | V | |
Drain current | DC | ID | -2.7 | A |
Pulse | IDP (Note 2) | -5.4 | ||
Drain power dissipation (Ta =25°C) | t=10s | 1.25 | W | |
PD (Note 1) | 0.7 | |||
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | -55 to 150 | °C |