SSM3K01F

The SSM3K01F is designed as toshiba field effect transistor silicon N channel MOS type for high speed switching applications.

SSM3K01F has three features. (1)Small package. (2)Low on resistance which means 120m max at Vgs=4V and would be 150m max at Vgs=2.5V. (3)Low gate threshold voltage which means 0.6V to 1.1V at Vds=3V and Id=0.1mA. Those are all the main features.

Some maximum ratings of SSM3K01F have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-10V. (3)Its drain current would be 1.3A for DC and would be 2.6A for pulse. (4)Its drain power dissipation would be 200mW. (5)Its channel temperature would be 150°C. (6)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SSM3K01F are concluded as follow. (1)Its gate leakage current would be max +/-5uA. (2)Its drain to source breakdown voltage would be min 30V. (3)Its drain cutoff current would be max 1uA. (4)Its gate threshold voltage would be min 0.6V and max 1.1V. (5)Its forward transfer admittance would be min 2.0S. (6)Its drain to source ON resistance would be typ 85m and max 120m at Id=0.65A, Vgs=4V and would be typ 115m and max 150m at Id=0.65A, Vgs=2.5V. (7)Its input capacitance would be typ 152pF. (8)Its reverse transfer capacitance would be typ 41pF. (9)Its output capacitance would be typ 102pF. (10)Its switching time would be typ 45ns for turn-on time and would be typ 69ns for turn-off time.

SSM3K01F should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!