ApplicationSmall PackageLow on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V)Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA)PinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate...
SSM3K01T: ApplicationSmall PackageLow on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V)Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA)Pinout...
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| Characteristic | Symbol | Rating | Unit | |
| Drain-Source voltage | VDS | 30 | V | |
| Gate-Source voltage | VGSS | ±10 | V | |
| Drain current | DC | ID | 3.2 | A |
| Pulse | IDP (Note 2) | 6.4 | ||
| Drain power dissipation (Ta =25°C) | PD (Note 1) | 1250 | mW | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | -55 to 150 | °C | |