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SSM5G10TU(TE85L,F)

MOSFET P-CH 20V 1.5A UFV

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SeekIC No. : 003432518 Detail

SSM5G10TU(TE85L,F): MOSFET P-CH 20V 1.5A UFV

SSM5G10TU(TE85L,F) Data Sheet

floor Price/Ceiling Price

US $ .14~.4 / Piece | Get Latest Price
Part Number:
SSM5G10TU(TE85L,F)
Mfg:
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Diode (Isolated) Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 6.4nC @ 4V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 250pF @ 10V
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV (2.0x2.1)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 500mW
Input Capacitance (Ciss) @ Vds: 250pF @ 10V
FET Feature: Diode (Isolated)
Current - Continuous Drain (Id) @ 25° C: 1.5A
Vgs(th) (Max) @ Id: 1V @ 1mA
Manufacturer: Toshiba
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: UFV (2.0x2.1)
Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V
Gate Charge (Qg) @ Vgs: 6.4nC @ 4V


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