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SSM9916H

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 18 V VGS Gate-Source Voltage ±12 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V 35 A ID@TC=100 Continuous Drain Current, VGS @ 4.5V 16 A IDM Pulsed Drain Current1 90 A PD@TC=25 Total P...

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SSM9916H: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 18 V VGS Gate-Source Voltage ±12 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V 35 A ID@TC=100 C...

SSM9916H Data Sheet

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Part Number:
SSM9916H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 18 V
VGS Gate-Source Voltage ±12 V
ID@TC=25 Continuous Drain Current, VGS @ 4.5V 35 A
ID@TC=100 Continuous Drain Current, VGS @ 4.5V 16 A
IDM Pulsed Drain Current1 90 A
PD@TC=25 Total Power Dissipation 50 W
  Linear Derating Factor 0.4 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

SSM9916H Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.




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