Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID@TA=25 Continuous Drain Current3 VGS @ 4.5V 6 A ID@TA=100 Continuous Drain Current3 VGS @ 4.5V 4.8 A IDM Pulsed Drain Current 1,4 20 A PD@TA=25 Total...
SSM9926M: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID@TA=25 Continuous Drain Current3 VGS @ 4.5V 6 A ID@TA=100 Con...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±8 | V |
ID@TA=25 | Continuous Drain Current3 VGS @ 4.5V | 6 | A |
ID@TA=100 | Continuous Drain Current3 VGS @ 4.5V | 4.8 | A |
IDM | Pulsed Drain Current 1,4 | 20 | A |
PD@TA=25 | Total Power Dissipation | 2 | W |
Linear Derating Factor | 0.016 | W/ | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
SSM9926M Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.