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SSM9930M

Specifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±25 ±25 V ID@TA=25 Continuous Drain Current3 6.3 -5.1 A ID@TA=100 Continuous Drain Current3 4.2 -3.4 A IDM Pulsed Drain Current1 ...

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SeekIC No. : 004503996 Detail

SSM9930M: Specifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±25 ±25 V ID@TA=25 Continuous Drain Current3 ...

SSM9930M Data Sheet

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Part Number:
SSM9930M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Specifications

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±25 ±25 V
ID@TA=25 Continuous Drain Current3 6.3 -5.1 A
ID@TA=100 Continuous Drain Current3 4.2 -3.4 A
IDM Pulsed Drain Current1 20 -20 A
PD@TA=25 Total Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

SSM9930M Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SSM9930M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for applications such as low-voltage inverters and motor drives.




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