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SSP70N10A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS(ON) : 0.018 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 100...

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SeekIC No. : 004504027 Detail

SSP70N10A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS(ON) ...

SSP70N10A Data Sheet

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Part Number:
SSP70N10A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.018 (Typ.)



Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C)
 55 A
Drain Current - Continuous (TC = 100°C) 38.9
IDM Drain Current - Pulsed 220 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 1613 mJ
IAR Avalanche Current 55 A
EAR Repetitive Avalanche Energy 18.8 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 188 W
1.25 W/°C
TJ, Tstg Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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