SSP7N80A

The SSP7N80A is a kind of power MOSFET. There are some features as follows: (1)avalanche rugged technology; (2)rugged gate oxide technology; (3)lower input capacitance; (4)improved gate charge; (5)extended safe operating area; (6)lower leakage current: 25A max @ VDS=800 V; (7)low RDS(ON): 1.472 typ.

What comes next is the absolute maximum ratings of SSP7N80A: (1)VDSS, drain-to-source voltage: 800 V; (2)ID, continuous drain current: 7 A at TC=25 and 4.4 A at TC=100; (3)IDM, drain current-pulsed: 28 A; (4)VGS, gate-to-source voltage: ±30 V; (5)EAS, single pulsed avalanche energy: 523 mJ; (6)IAR, avalanche current: 7 A; (7)EAR, repetitive avalanche energy: 16 mJ; (8)dv/dt, peak diode recovery dv/dt: 2.0 V/ns; (9)PD, total power dissipation (TC=25): 160 W; (10)TJ, TSTG: operating junction and storage temperature range: -55 to +150; (11)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.

The following is about the electrical characteristics (TC=25 unless otherwise specified): (1)BVDSS, drain-source breakdown voltage: 800 V min at VGS=0 V, ID=250A; (2)VGS(th), gate threshold voltage: 2.0 V min and 3.5 V max at VDS=5 V, ID=250A; (3)IGSS, gate-source leakage, forward: 100 nA max when VGS=30 V ; (4)IGSS, gate-source leakage, reverse: -100 nA max when VGS=-30 V ; (5)IDSS, drain-to-source leakage current: 25A max at VDS=800 V; 250A max at VDS=640 V, TC=125; (6)RDS(on), static drain-source on-state resistance: 1.8 max at VGS=10 V, ID=0.85 A.