SSS3N80A

The SSS3N80A is designed as one kind of advanced power MOSFET that has some points of features:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)low input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)low leakage current: 25 uA (max.) @ VDS=800 V;(7)lower RDS(ON): 3.800 (typ.).

The absolute maximum ratings of the SSS3N80A can be summarized as:(1)drain-to-source voltage: 800 V;(2)continuous drain current (Tc=25): 2 A;(3)continuous drain current (Tc=100): 1.3 A;(4)drain current-pulsed: 12 A;(5)gate-to-source voltage: +/- 30 V;(6)single pulsed avalanche energy: 235 mJ;(7)avalanche current: 2 A;(8)repetitive avalanche energy: 3.5 mJ;(9)peak diode recovery dv/dt: 2.0 V/ns;(10)operating junction and storage temperature range: -55 to +150 ;(11)maximum lead temperature for soldering purposes, 1/8" from case for 5-seconds: 300 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .