Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 25 A (Max.) @ VDS = 900V` Low RDS(ON) : 4.679 (Typ.)Specifications Symbol Characteristic Value Units VDSS D...
SSS3N90A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 25 A (Max.) @ VDS = 900V` ...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
900 |
V |
ID |
Continuous Drain Current (TC=25) |
2 |
A |
Continuous Drain Current (TC=100) |
1.3 |
A | |
IDM |
Drain Current-Pulsed |
12 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
286 |
mJ |
IAR |
Avalanche Current |
2 |
A |
EAR |
Repetitive Avalanche Energy |
3.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
1.5 |
V/ns |
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
35 0.28 |
W W/ |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds |
300 |