SSS5N80

The SSS5N80 is a kind of N-channel power MOSFET.

There are some features of SSS5N80 as follows: (1)lower RDS(ON); (2)improved inductive ruggedness; (3)fast switching times; (4)rugged polysilicon gate cell structure; (5)lower input capacitance; (6)extended safe operating area; (7)improved high temperature reliability.

The following is the absolute maximum ratings of SSS5N80: (1)VDSS, drain-to-source voltage: 800 V; (2)ID, continuous drain current: 2.7 A at TC=25 and 1.9 A at TC=100; (3)IDM, drain current-pulsed: 20 A; (4)VGS, gate-to-source voltage: ±30 V; (5)EAS, single pulsed avalanche energy: 127 mJ; (6)IAS, avalanche current: 2.7 A; (7)drain-gate voltage (RGS=1.0 M): 800 V; (8)PD, total power dissipation (TC=25): 42 W; (9)TJ, Tstg, operating junction and storage temperature: -55 to +150; (10)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.