SSS5N80A

The SSS5N80A is a kind of advanced power MOSFET.

There are some features of SSS5N80A as follows: (1)avalanche regged technology; (2)rugged gate oxide technology; (3)lower input capacitance; (4)improved gate charge; (5)extended safe operating area; (6)low leakage current: 25A (max) @ VDS=800 V; (7)low RDS(ON): 1.824 (typ).

The following is the absolute maximum ratings of SSS5N80A: (1)VDSS, drain-to-source voltage: 800 V; (2)ID, continuous drain current: 3 A at TC=25 and 1.9 A at TC=100; (3)IDM, drain current-pulsed: 20 A; (4)VGS, gate-to-source voltage: ±30 V; (5)EAS, single pulsed avalanche energy: 336 mJ; (6)IAR, avalanche current: 3 A; (7)EAR, repetitive avalanche energy: 4.5 mJ; (8)dv/dt, peak diode recovery dv/dt: 2.0 V/ns; (9)PD, total power dissipation (TC=25): 45 W; (10)TJ, Tstg, operating junction and storage temperature: -55 to +150; (11)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.