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SSS70N10A

MOSFET

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SeekIC No. : 00166589 Detail

SSS70N10A: MOSFET

SSS70N10A Data Sheet

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Part Number:
SSS70N10A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PF    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Resistance Drain-Source RDS (on) : 0.023 Ohms
Continuous Drain Current : 28 A
Package / Case : TO-3PF


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.018 m(Typ.)



Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C)
 28 A
Drain Current - Continuous (TC = 100°C) 29.8
IDM Drain Current - Pulsed 220 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 1568 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 4.9 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 49 W
0.32 W/°C
TJ, Tstg Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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