SSS7N55

The SSS7N55 is designed as one kind of advanced power MOSFET that has some points of features:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)low input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)improved high temperature reliability.

The absolute maximum ratings of the SSS7N55 can be summarized as:(1)drain-to-source voltage: 550 V;(2)continuous drain current (Tc=25): 4.0 A;(3)continuous drain current (Tc=100): 2.8 A;(4)drain current-pulsed: 28 A;(5)single pulsed avalanche energy: 183 mJ;(6)avalanche current: 4.0 A;(7)repetitive avalanche energy: 4.8 mJ;(8)total power dissipation at Tc=25: 42 W;(9)operating junction and storage temperature range: -55 to +150 ;(10)maximum lead temperature for soldering purposes, 1/8" from case for 5-seconds: 300 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .