Features: • 5.0-Volt Read Operation for 27SF256• 2.7-Volt Read Operation for 27VF256• Superior Reliability Endurance: Minimum 1000 Cycles Greater than 100 years Data Retention• Low Power Consumption: Active Current: 20 mA (typical) for 5V and 10mA (typical) for 2.7V Sta...
SST27VF256: Features: • 5.0-Volt Read Operation for 27SF256• 2.7-Volt Read Operation for 27VF256• Superior Reliability Endurance: Minimum 1000 Cycles Greater than 100 years Data Retention...
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The SST27VF256 are 32K x 8 CMOS, many-time programmable (MTP) low cost flash, manufactured with SST's proprietary, high performance SuperFlash technology.The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 27SF256/27VF256 can be electrically erased and programmed at least 1000 times using an external programmer, e.g., to change the contents of devices in inventory. The 27SF256/27VF256 have to be erased prior to programming.The SST27VF256 conform to JEDEC standard pinouts for byte-wide memories.
Featuring high performance byte programming, the SST27VF256 provide a byte-program time of 20 s. The entire memory can be programmed byte by byte in less than 0.8 seconds. Designed, manufactured, and tested for a wide spectrum of applications, the 27SF256/27VF256 are offered with an endurance of 1000 cycles. Data retention is rated at greater than 100 years.
The SST27VF256 are suited for applications that require infrequent rewrites and low power nonvolatile storage. The 27SF256/27VF256 will improve flexibility,efficiency, and performance while matching the low cost in nonvolatile applications that currently use UVEPROMs,OTPs, and mask ROMs.