Features: • Single Voltage Read and Write Operations
5.0V-only for SST29EE020
3.0-3.6V for SST29LE020
2.7-3.6V for SST29VE020
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption
Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
Standby Current: 10 µA (typical)
• Fast Page-Write Operation
128 Bytes per Page, 2048 Pages
Page-Write Cycle: 5 ms (typical)
Complete Memory Rewrite: 10 sec (typical)
Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
5.0V-only operation: 120 and 150 ns
3.0-3.6V operation: 200 and 250 ns
2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
Internal VPP Generation
• End of Write Detection
Toggle Bit
Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via Software Operation
• TTL I/O Compatibility
• JEDEC Standard
Flash EEPROM Pinouts and command sets
• Packages Available
32-lead PLCC
32-lead TSOP (8mm x 14mm, 8mm x 20mm)
32-pin PDIPPinout
SpecificationsTemperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD + 1.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mADescriptionThe SST29EE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE020 provide a typical Byte-Write time of 39 µsec. The entire memory, i.e., 256 KBytes, can be written page-bypage in as little as 10 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE/LE/VE020 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE/LE/VE020 are offered with a guaranteed Page- Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST29EE020 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29EE/LE/VE020 significantly improve performance and reliability, while lowering power consumption. The SST29EE/LE/VE020 improve flexibility while lowering the cost for program, data, and configuration storage applications.
To meet high density, surface mount requirements, the SST29EE020 are offered in 32-lead PLCC and 32- lead TSOP packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1, 2, and 3 for pinouts.
SST29EE020 Data Sheet
