SST37VF010

The SST37VF010 devices are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable
(MTP), low cost flash, manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The
split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with
alternate approaches. The SST37VF512/010/020/040 can be electrically erased and programmed at least 1000 times
using an external programmer, e.g., to change the contents of devices in inventory. The SST37VF512/010/020/040
have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide flash
memories.
SST37VF010 Featuring high performance Byte-Program, the SST37VF512/010/020/040 provide a typical Byte-Program time of 10 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years.
The SST37VF512/010/020/040 are suited for applications that require infrequent writes and low power nonvolatile
storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and mask ROMs.
To meet surface mount and conventional through hole requirements, the SST37VF512/010/020/040 are offered in
32-pin PLCC, TSOP, and PDIP packages. See Figures 1, 2, and 3 for pinouts.