SST38VF166

The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E²PROM manufactured with SST's proprietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E² bank is transparent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories.

The SST38VF166 device is divided into three separate memory banks, 2 each 512K x16 Flash banks and a 4K x16 E² bank. Each Flash bank is typically used for program code storage and contains 512 sectors, each of 1 KWords or 16 blocks, each of 32 KWords. The Flash banks may also be used to store data. The E² bank is typically used for data or configuration storage and contains 128 sectors, each of 32 words. Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank Enable (BE#) lines.

The SST38VF166 inherently uses less energy during Erase, Program, and Write than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase, Program, or Write operation is less than alternative flash technologies. The Auto Low Power mode automatically reduces the active read current to approximately the same as standby; thus, providing an average read current of approximately 1 mA/MHz of Read cycle time.

The SuperFlash technology provides fixed Erase, Program, and Write times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.