SST49LF080A

Features:

• LPC Interface Flash
SST49LF080A: 1024K x8 (8 Mbit)
• Conforms to Intel LPC Interface Specification 1.0
• Flexible Erase Capability
Uniform 4 KByte Sectors
Uniform 64 KByte overlay blocks
64 KByte Top Boot Block protection
Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption
Active Read Current: 6 mA (typical)
Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time: 16 seconds (typical)
Single-pulse Program or Erase
Internal timing generation
• Two Operational Modes
Low Pin Count (LPC) Interface mode for in-system operation
Parallel Programming (PP) Mode for fast production programming
• LPC Interface Mode
5-signal communication interface supporting byte Read and Write
33 MHz clock frequency operation
WP# and TBL# pins provide hardware write protect for entire chip and/or top boot block
Standard SDP Command Set
Data# Polling and Toggle Bit for End-of-Write detection
5 GPI pins for system design flexibility
4 ID pins for multi-chip selection
• Parallel Programming (PP) Mode
11-pin multiplexed address and 8-pin data I/O interface
Supports fast programming In-System on programmer equipment
• CMOS and PCI I/O Compatibility
• Packages Available
32-lead PLCC
32-lead TSOP (8mm x 14mm)


Description

The SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC mode for in-system operations and Parallel Programming (PP) mode to interface with programming
equipment.
The SST49LF080A flash memory device is manufactured with SST's proprietary, high-performance SuperFlash
Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability
compared with alternate approaches. The SST49LF080A device significantly improves performance and reliability,
while lowering power consumption. The SST49LF080A device writes (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current and time of application. For any give voltage range, the
SuperFlash technology uses less current to program andhas a shorter erase time; the total energy consumed during
any Erase or Program operation is less than alternative flash memory technologies. The SST49LF080A product
provides a maximum Byte-Program time of 20 µsec. The entire memory can be erased and programmed byte-bybyte
typically in 16 seconds when using status detection features such as Toggle Bit or Data# Polling to indicate the
completion of Program operation. The SuperFlash technology provides fixed Erase and Program time, independent
of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does
not have to be calibrated or correlated to the cumulative number of Erase cycles as is necessary with alternative
flash memory technologies, whose Erase and Program time increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST49LF080A device is offered in 32-lead TSOP and 32-
lead PLCC packages. See Figures 1 and 2 for pin assignments and Table 1 for pin descriptions.