SSTJ210

Features: Low Noise Low LeakageHigh Power GainApplicationGeneral Purpose Amplifiers VHF/UHF AmplifiersMixers OscillatorsSpecifications Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage VGD -25 V Gate-Source Voltage VGS -25 V Gate Current IG ...

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SSTJ210 Picture
SeekIC No. : 004505451 Detail

SSTJ210: Features: Low Noise Low LeakageHigh Power GainApplicationGeneral Purpose Amplifiers VHF/UHF AmplifiersMixers OscillatorsSpecifications Parameter/Test Condition Symbol Limit Unit Gat...

floor Price/Ceiling Price

Part Number:
SSTJ210
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

Low Noise
Low Leakage
High Power Gain






Application

General Purpose Amplifiers
VHF/UHF Amplifiers
Mixers
Oscillators






Specifications

Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
VGD
-25
V
Gate-Source Voltage
VGS
-25
V
Gate Current
IG
10
mA
Power Dissipation
PD
360
mW
Power Derating
3.27
mW/ oC
Operating Junction Temperature
TJ
-55 to 135
oC
Storage Temperature
Tstg
-55 to 150
oC
Lead Temperature (1/16" from case for 10 seconds)
TL
300
oC





Description

The J210 Series of the SSTJ210 is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and amplifier applications.






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