SSTJ211

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : - 25 V
Packaging : Can
Package / Case : SOT-23 (TO-236)


Features:

Low Noise
Low Leakage
High Power Gain

Application

General Purpose Amplifiers
VHF/UHF Amplifiers
Mixers
Oscillators

Specifications

Parameter/Test Condition	Symbol	Limit	Unit
Gate-Drain Voltage	VGD	-25	V
Gate-Source Voltage	VGS	-25	V
Gate Current	IG	10	mA
Power Dissipation	PD	360	mW
Power Derating		3.27	mW/ oC
Operating Junction Temperature	TJ	-55 to 135	oC
Storage Temperature	Tstg	-55 to 150	oC
Lead Temperature (1/16" from case for 10 seconds)	TL	300	oC

Description

The J210 Series of the SSTJ211 is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and amplifier applications.