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SSW/I5N60A

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Lower RDS(ON) : 1.81 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Sourc...

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SeekIC No. : 004505489 Detail

SSW/I5N60A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Lower R...

SSW/I5N60A Data Sheet

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Part Number:
SSW/I5N60A
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 25 A (Max.) @ VDS = 600V
`Lower RDS(ON) : 1.81 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC=25) 4.5 A
Continuous Drain Current (TC=100) 2.8 A
IDM Drain Current-Pulsed 18 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 331 mJ
IAR Avalanche Current 4.5 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 110
0.88		 W
W/
TJ ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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