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SSW/I5N80A

Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 25 mA (Max.) @ VDS = 800V·Low RDS(ON) : 1.824 W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Sou...

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SeekIC No. : 004505490 Detail

SSW/I5N80A: Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 25 mA (Max.) @ VDS = 800V·Low RD...

SSW/I5N80A Data Sheet

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Part Number:
SSW/I5N80A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current : 25 mA (Max.) @ VDS = 800V
·Low RDS(ON) : 1.824 W (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 800 V
ID Continuous Drain Current (TC=25) 5 A
Continuous Drain Current (TC=100) 3.2 A
IDM Drain Current-Pulsed 20 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 333 mJ
IAR Avalanche Current 5 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 3.1
140		 W
W/
TJ ,TSTG Operating Junction and
Storage Temperature Range		 1.12
- 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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