ST13005(A)

The ST13005(A) is a type of high voltage fast-switching NPN power transistor which is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability and using a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features of the ST13005(A) are:(1) medium voltage capability; (2) NPN transistors; (3) low spread of dynamic parameters; (4) minimum LOT-TO-LOT spread for reliableoperation; (5) very high switching speed; (6) through-hole I2PAK (TO-262) power packagein tube (suffix "-1").

The absolute maximum ratings of the ST13005(A) can be summarized as (1): collector-emit ter voltage (VBE = 0)(VCES) is 700 V; (2):  collector-emitter voltage (IB = 0)(VCEO) is 400 V; (3):  emitter-base voltage (IC = 0)(VEBO) is 9 V; (4):  collector current(IC) is 4 A; (5):  collector peak current (tp < 5 ms)(ICM ) is 8 A; (6):  base current(IB) is 2 A; (7):  base peak current (tp < 5 ms)(IBM) is 4 A; (8):  total dissipation at Tc = 25 (Ptot) is 75 W; (9):  storage temperature (Tstg) is-65 to 150 ; (10):  max. operating junction temperature(Tj) is 150 .