ST13007D

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 100µA
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 8A
Package / Case: TO-220-3
Supplier Device Package: TO-220
Packaging: Tube
Power - Max: 80W
Manufacturer: STMicroelectronics
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V


Features:

` IMPROVED SPECIFICATION:
    - LOWER LEAKAGE CURRENT
    - TIGHTER GAIN RANGE
    - DC CURRENT GAIN PRESELECTION
    - TIGHTER STORAGE TIME RANGE
` HIGH VOLTAGE CAPABILITY
` INTEGRATED FREE-WHEELING DIODE
` LOW SPREAD OF DYNAMIC PARAMETERS
` MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
` VERY HIGH SWITCHING SPEED
` FULLY CHARACTERIZED AT 125
` LARGE RBSOA


Application

· UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS
· SWITCH MODE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VCEV	Collector-Emitter Voltage (VBE = -1.5V)	700	V
VCEO	Collector-Emitter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	8	A
ICM	Collector Peak Current	16	A
IB	Base Current	4	A
IBM	Base Peak Current	8	A
Ptot	Total Power Dissipation at Tc = 25	80	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The ST13007D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

The ST13007D uses a Cellular Emitter structure to enhance switching speeds.