Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
ST2310HI: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 600 V |
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 12 A |
| DC Collector/Base Gain hfe Min : | 25 | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-93 |
| Packaging : | Tube |
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VBE = 0) |
1500 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
600 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
7 |
V |
|
IC |
Collector Current |
12 |
A |
|
ICM |
Collector Peak Current (tp < 5 ms) |
25 |
A |
|
IB |
Base Current |
7 |
A |
|
Ptot |
Total Power Dissipation at Tc = 25 |
55 |
W |
|
Visol |
Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink |
2500 |
V |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
The device ST2310HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.