Transistors Bipolar (BJT) Lo Vltg NPN Pwr TRANSISTOR
ST631K: Transistors Bipolar (BJT) Lo Vltg NPN Pwr TRANSISTOR
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 120 V | ||
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A | ||
| DC Collector/Base Gain hfe Min : | 120 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-32 | Packaging : | Tube |
| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage(IE=0) |
-120 |
V |
| VCEO | Collector-Emitter Voltage(IB=0) |
-120 |
V |
| VEBO | Emitter-Base Voltage(IC=0) |
-5 |
V |
| IC | Device Current |
-1 |
A |
| ICM | Collector Peak Current (tp < 5 ms) |
-2 |
A |
| IB | Base Current |
-0.5 |
A |
| IBM | Base Peak Current (tP < 5ms) |
-1 |
A |
| Ptot | Total Dissipation at Tc = 25 |
12.5 |
W |
| Tstg | Storage Temperature |
65 to 150 |
|
| Tj | Max. Operating Junction Temperature |
150 |
The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K.
| Technical/Catalog Information | ST631K |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 12.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | SOT-32-3, TO-126-3 |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ST631K ST631K |